Anomalous Channel Length Dependence of Hot-Carrier-Induced Saturation Drain Current Degradation in n-Type MOSFETs

The dependencies of hot-carrier-induced degradations on the effective channel length L_{ch, eff} are investigated for n-type metal-oxide-semiconductor field effect transistor (MOSFETs). Our experiments find that, with decreasing L_{ch, eff}, the saturation drain current (I_dsat) degradation is unexpectedly alleviated. The further study demonstrates that the anomalous L_{ch, eff} dependence of I_dsat degradation is induced by the increasing influence of the substrate current degradation on the I_dsat degradation with L_{ch, eff} reducing.