Nano-Crystalline Diamond Films Grown by Radio-Frequency Inductively Coupled Plasma Jet Enhanced Chemical Vapor Deposition
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Abstract
Radio-frequency inductively coupled plasma jet is utilized to grow diamond films to combine the advantages of clean deposition environment and large deposition area. Before diamond growth, the simulation of deposition environment is studied to understand the flow field and the properties of the plasma. The optical emission spectra (OES) are also applied to diagnose the rf plasma. The plasma density ne and the electron temperature Te deduced from the data measured by OES are about 1.0×1014 l/cm3 and 1.4 eV, which are in good agreement with the data calculated in the simulation. Based on the data from both simulation and measurement, the optimized growth parameters are determined to grow diamond films. Nano-crystalline diamond with cauliflower-like morphology is obtained. The crystalline feature and impurity of as-grown films are also studied.
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SHI Yan-Chao, LI Jia-Jun, LIU Hao, ZUO Yong-Gang, BAI Yang, SUN Zhan-Feng, MA Dian-Li, CHEN Guang-Chao. Nano-Crystalline Diamond Films Grown by Radio-Frequency Inductively Coupled Plasma Jet Enhanced Chemical Vapor Deposition[J]. Chin. Phys. Lett., 2015, 32(8): 088104. DOI: 10.1088/0256-307X/32/8/088104
SHI Yan-Chao, LI Jia-Jun, LIU Hao, ZUO Yong-Gang, BAI Yang, SUN Zhan-Feng, MA Dian-Li, CHEN Guang-Chao. Nano-Crystalline Diamond Films Grown by Radio-Frequency Inductively Coupled Plasma Jet Enhanced Chemical Vapor Deposition[J]. Chin. Phys. Lett., 2015, 32(8): 088104. DOI: 10.1088/0256-307X/32/8/088104
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SHI Yan-Chao, LI Jia-Jun, LIU Hao, ZUO Yong-Gang, BAI Yang, SUN Zhan-Feng, MA Dian-Li, CHEN Guang-Chao. Nano-Crystalline Diamond Films Grown by Radio-Frequency Inductively Coupled Plasma Jet Enhanced Chemical Vapor Deposition[J]. Chin. Phys. Lett., 2015, 32(8): 088104. DOI: 10.1088/0256-307X/32/8/088104
SHI Yan-Chao, LI Jia-Jun, LIU Hao, ZUO Yong-Gang, BAI Yang, SUN Zhan-Feng, MA Dian-Li, CHEN Guang-Chao. Nano-Crystalline Diamond Films Grown by Radio-Frequency Inductively Coupled Plasma Jet Enhanced Chemical Vapor Deposition[J]. Chin. Phys. Lett., 2015, 32(8): 088104. DOI: 10.1088/0256-307X/32/8/088104
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