Optimization of 1.3-μm InGaAsP/InP Electro-Absorption Modulator
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Abstract
We report the simulation and experimental results of 1.3-μm InGaAsP/InP multiple quantum well (MQW) electro-absorption modulators (EAMs). In this work, the quantum confined Stark effect of the EAM is systematically analyzed through the finite element method. An optimized structure of the 1.3-μm InGaAsP/InP QW EAM is proposed for applications in 100 G ethernet. Then 1.3-μm InGaAsP/InP EAMs with f?3 dB bandwidth of over 20 GHz and extinction ratio over 20 dB at 3 V bias voltage are demonstrated.
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WANG Hui-Tao, ZHOU Dai-Bing, ZHANG Rui-Kang, LU Dan, ZHAO Ling-Juan, ZHU Hong-Liang, WANG Wei, JI Chen. Optimization of 1.3-μm InGaAsP/InP Electro-Absorption Modulator[J]. Chin. Phys. Lett., 2015, 32(8): 084203. DOI: 10.1088/0256-307X/32/8/084203
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WANG Hui-Tao, ZHOU Dai-Bing, ZHANG Rui-Kang, LU Dan, ZHAO Ling-Juan, ZHU Hong-Liang, WANG Wei, JI Chen. Optimization of 1.3-μm InGaAsP/InP Electro-Absorption Modulator[J]. Chin. Phys. Lett., 2015, 32(8): 084203. DOI: 10.1088/0256-307X/32/8/084203
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WANG Hui-Tao, ZHOU Dai-Bing, ZHANG Rui-Kang, LU Dan, ZHAO Ling-Juan, ZHU Hong-Liang, WANG Wei, JI Chen. Optimization of 1.3-μm InGaAsP/InP Electro-Absorption Modulator[J]. Chin. Phys. Lett., 2015, 32(8): 084203. DOI: 10.1088/0256-307X/32/8/084203
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WANG Hui-Tao, ZHOU Dai-Bing, ZHANG Rui-Kang, LU Dan, ZHAO Ling-Juan, ZHU Hong-Liang, WANG Wei, JI Chen. Optimization of 1.3-μm InGaAsP/InP Electro-Absorption Modulator[J]. Chin. Phys. Lett., 2015, 32(8): 084203. DOI: 10.1088/0256-307X/32/8/084203
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