Single-Photon Emission from GaAs Quantum Dots Embedded in Nanowires
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Received Date:
March 06, 2015
Revised Date:
June 23, 2015
Published Date:
June 23, 2015
Abstract
A highly efficient single-photon source based on a semiconductor quantum dot (QD) is a promising candidate in quantum information processing. We report a single-photon source based on self-assembled GaAs QDs in nanowires with an extraction efficiency of 14%. The second-order correlation function g (2) (0) at saturate excitation power is estimated to be 0.28. The measured polarization of QD emission depends on the geometric relations between the directions of PL collection and the long axis of nanowires.
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About This Article
Cite this article:
YANG Shuang, DOU Xiu-Ming, YU Ying, NI Hai-Qiao, NIU Zhi-Chuan, JIANG De-Sheng, SUN Bao-Quan. Single-Photon Emission from GaAs Quantum Dots Embedded in Nanowires[J].
Chin. Phys. Lett. , 2015, 32(7): 077804.
DOI: 10.1088/0256-307X/32/7/077804
YANG Shuang, DOU Xiu-Ming, YU Ying, NI Hai-Qiao, NIU Zhi-Chuan, JIANG De-Sheng, SUN Bao-Quan. Single-Photon Emission from GaAs Quantum Dots Embedded in Nanowires[J]. Chin. Phys. Lett. , 2015, 32(7): 077804. DOI: 10.1088/0256-307X/32/7/077804
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