Bandgap Engineering in Wurtzite GaAs Nanowires by Hydrostatic Pressure

  • Received Date: February 26, 2015
  • Revised Date: June 23, 2015
  • Published Date: June 23, 2015
  • Band structure of wurtzite (WZ) GaAs nanowires (NWs) is investigated by using photoluminescence measurements under hydrostatic pressure at 6 K. We demonstrate that WZ GaAs NWs have a direct bandgap transition with an emission energy of 1.53 eV, corresponding to the optical transition between conduction band Γ7C and valence band Γ9V in WZ GaAs. The direct-to-pseudodirect bandgap transition can be observed by applying a pressure approximately above 2.5 GPa.
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