Evaluation of the Ultrafast Thermal Manipulation of Magnetization Precession in Ferromagnetic Semiconductor (Ga,Mn)As
-
Abstract
We present a quantitative evaluation study of the thermal effect responsible for laser-triggered collective magnetization dynamics in a ferromagnetic (Ga,Mn)As film without applying the external magnetic field by employing the pump-probe magneto-optical spectroscopy. Our observation shows that the effect of ultrafast laser heating on the manipulation of magnetization precession in a (Ga,Mn)As film is not exactly equivalent to that of the ambient temperature increase, and needs to be carefully analyzed by considering the temperature-dependent specific heat of (Ga,Mn)As. The transient modulation of magnetocrystalline anisotropy via ultrafast laser heating at low temperature exhibits a higher sensitivity than that at high temperature. The quantitative analysis of the laser-heating manipulated magnetization precession presented in this work is helpful for evaluating the laser-triggered ultrafast magnetization dynamics in (Ga,Mn)As films.
Article Text
-
-
-
About This Article
Cite this article:
LI Hang, ZHANG Xin-Hui. Evaluation of the Ultrafast Thermal Manipulation of Magnetization Precession in Ferromagnetic Semiconductor (Ga,Mn)As[J]. Chin. Phys. Lett., 2015, 32(6): 067501. DOI: 10.1088/0256-307X/32/6/067501
LI Hang, ZHANG Xin-Hui. Evaluation of the Ultrafast Thermal Manipulation of Magnetization Precession in Ferromagnetic Semiconductor (Ga,Mn)As[J]. Chin. Phys. Lett., 2015, 32(6): 067501. DOI: 10.1088/0256-307X/32/6/067501
|
LI Hang, ZHANG Xin-Hui. Evaluation of the Ultrafast Thermal Manipulation of Magnetization Precession in Ferromagnetic Semiconductor (Ga,Mn)As[J]. Chin. Phys. Lett., 2015, 32(6): 067501. DOI: 10.1088/0256-307X/32/6/067501
LI Hang, ZHANG Xin-Hui. Evaluation of the Ultrafast Thermal Manipulation of Magnetization Precession in Ferromagnetic Semiconductor (Ga,Mn)As[J]. Chin. Phys. Lett., 2015, 32(6): 067501. DOI: 10.1088/0256-307X/32/6/067501
|