Optimization of High Power 1.55-μm Single Lateral Mode Fabry–Perot Ridge Waveguide Lasers

Optimization of the high power single-lateral-mode double-trench ridge waveguide semiconductor laser based on InGaAsP/InP quantum-well heterostructures with a separate confinement layer is reported. Two different waveguide structures of Fabry–Perot lasers emitting at a wavelength of 1.55 μm are fabricated. The influence of an effective lateral refractive index step on the maximum output power is investigated. A cw single mode output power of 165 mW is obtained for a 1-mm-long uncoated laser.