Structural and Magnetic Properties of Co2MnSi Thin Film with a Low Damping Constant
-
Abstract
Co2MnSi thin films are made by magnetron sputtering onto MgO (001) substrates. The crystalline quality is improved by increasing depositing temperature and/or annealing temperature. The sample deposited at 550°C and subsequently annealed at 550°C (sample I) exhibits a pseudo-epitaxial growth with partially ordered L21 phase. Sample I shows a four-fold magnetic anisotropy, in addition to a relatively weak uniaxial anisotropy. The Gilbert damping factor of sample I is smaller than 0.001, much smaller than reported ones. The possible reasons responsible for the small Gilbert damping factor are discussed, including weak spin-orbit coupling, small density of states at Fermi level, and so on. -
References
[1] Picozzi S et al 2002 Phys. Rev. B 66 094421 doi: 10.1103/PhysRevB.66.094421 [2] Li S D et al 2012 J. Appl. Phys. 111 07C705 [3] Liu H X et al 2012 Appl. Phys. Lett. 101 132418 [4] Wang S et al 2013 Chin. Phys. B 22 57305 [5] Trudel S et al 2010 J. Phys. D 43 193001 [6] Li S D et al 2013 J. Nanosci. Nanotechnol. 13 1182 [7] Liu C S et al 2009 Appl. Phys. Lett. 95 022509 [8] Tang L and Yang Z 2013 J. Appl. Phys. 114 193703 [9] Ortiz G et al 2013 J. Appl. Phys. 113 043921 [10] Yilgin R et al 2007 Jpn. J. Appl. Phys. 46 L205 [11] Slonczewski S J 1996 J. Magn. Magn. Mater. 159 L1 [12] Conca A et al 2013 J. Appl. Phys. 113 213909 [13] Gabor M S et al 2011 Phys. Rev. B 84 134413 [14] Graf T et al 2011 IEEE Trans. Magn. 47 367 [15] Picozzi S et al 2004 Phys. Rev. B 69 094423 [16] Hoshino T et al 2010 J. Alloys Compd. 504 S531 [17] Raphael M et al 2002 Phys. Rev. B 66 104429 [18] Wang G X et al 2012 J. Magn. Magn. Mater. 324 2840 [19] Xu F et al 2012 J. Appl. Phys. 111 07A304 [20] Xu F et al 2011 IEEE Trans. Magn. 47 3921 [21] Jiang C J et al 2009 J. Appl. Phys. 106 103910 [22] Svalov A V et al 2001 Chin. Phys. Lett. 18 973 [23] Yi M, Chen Z F, Chen D X, Sukegawa H, Inomata K, Lai T S and Zhou S M 2011 Chin. Phys. Lett. 28 067501 [24] Lindner J and Farle M 2007 Springer Tracts Mod. Phys. 227 45 [25] Michael M 1998 Rep. Prog. Phys. 61 755 [26] Gu W J, Pan J and Hu J G 2012 Acta Phys. Sin. 61 167501 (in Chinese) [27] Shaw J M, Nembach H T, Silva T J and Boone C T 2013 J. Appl. Phys. 114 243906 [28] Kurebayashi H, Skinner T D, Khazen K, Olejniík K, Fang D, Ciccarelli C, Campion R P, Gallagher B L, Fleet L, Hirohata A and Ferguson A J 2013 Appl. Phys. Lett. 102 062415 [29] Kalarickal S, Krivosik P, Das J, Kim K and Patton C E 2008 Phys. Rev. B 77 054427 [30] Mills D L and Arias R 2006 Physica B 384 147 [31] Zakeri K, Lindner J, Barsukov I, Meckenstock R, Farle M, H?rsten V U, Wende H, Keune W, Rocker J, Kalarickal S, Lenz K, Kuch W, Baberschke K and Frait Z 2007 Phys. Rev. B 76 104416 [32] Kambersky V 1976 Czech. J. Phys. B 28 1366 [33] Kambersky V 1970 Can. J. Phys. 48 2906 [34] Yang F J and Chen X Q 2013 Appl. Phys. Lett. 102 252407 [35] Mizukami S, Watanabe D, Oogane M, Ando Y, Miura Y, Shirai M and Miyazaki T 2009 J. Appl. Phys. 105 07D306 [36] Pandey H, Joshi P C, Pant R P, Prasad R, Auluck S and Budhani R C 2012 J. Appl. Phys. 111 023912 -
Related Articles
[1] HU Wen-Juan, XIE Fen-Yan, CHEN Qiang, WENG Jing. Polyethylene Oxide Films Polymerized by Radio Frequency Plasma-Enhanced Chemical Vapour Phase Deposition and Its Adsorption Behaviour of Platelet-Rich Plasma [J]. Chin. Phys. Lett., 2008, 25(10): 3805-3807. [2] HAO Xiao-Peng, WANG Bao-Yi, YU Run-Sheng, WEI Long, WANG Hui, ZHAO De-Gang, HAO Wei-Chang. Evolution of Structural Defects in SiOx Films Fabricated by Electron Cyclotron Resonance Plasma Chemical Vapour Deposition upon Annealing Treatment [J]. Chin. Phys. Lett., 2008, 25(3): 1034-1037. [3] LIN Ying-Bin, YANG Yan-Min, XU Jian-Ping, LIU Xing-Chong, WANGJian-Feng, HUANG Zhi-Gao, ZHANG Feng-Ming, DU You-Wei. Photoluminescence of ZnO and Mn-Doped ZnO Polycrystalline Films Prepared by Plasma Enhanced Chemical Vapour Deposition [J]. Chin. Phys. Lett., 2007, 24(9): 2685-2688. [4] LIN Ying-Bin, LU Zhi-Hai, ZOU Wen-Qin, LU Zhong-Lin, XU Jian-Ping, JI Jian-Ti, LIU Xing-Chong, WANG Jian-Feng, LV Li-Ya, ZHANG Feng-Ming, DU You-Wei, HUANG Zhi-Gao, ZHENG Jian-Guo. Room-Temperature Ferromagnetic ZnMnO Thin Films Synthesized by Plasma Enhanced Chemical Vapour Deposition Method [J]. Chin. Phys. Lett., 2007, 24(7): 2085-2087. [5] Department of Physics, Lanzhou University, Lanzhou. Al-Induced Crystallization Growth of Si Films by Inductively Coupled Plasma Chemical Vapour Deposition [J]. Chin. Phys. Lett., 2006, 23(12): 3338-3340. [6] YU Wei, WANG Bao-Zhu, LU Wan-Bing, YANG Yan-Bin, HAN Li, FU Guang-Sheng. Growth of Nanocrystalline Silicon Films by Helicon Wave Plasma Chemical Vapour Deposition [J]. Chin. Phys. Lett., 2004, 21(7): 1320-1322. [7] LIN Xuan-Ying, HUANG Chuang-Jun, LIN Kui-Xun, YU Yun-Peng, YU Chu-Ying, CHI Ling-Fei. Low-Temperature Growth of Polycrystalline Silicon Films bySiCl4/H2 rf Plasma Enhanced Chemical Vapor Deposition [J]. Chin. Phys. Lett., 2003, 20(10): 1879-1882. [8] WANG Peng-Fei, DING Shi-Jin, ZHANG Wei, ZHANG Jim-Yun, WANG Ji-Tao, WEI William Lee. FTIR Characterization of Fluorine Doped Silicon Dioxide Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition [J]. Chin. Phys. Lett., 2000, 17(12): 912-914. [9] LIU Yi-chun, LIU Chun-guang, CHEN Da-wei, LIU Yu-xue, BAI Yu-bai, LI Tie-jin. Photoluminescence Properties of a-SiC:H Films Grown by Plasma Enhanced Chemical Vapor Deposition from SiH4+C2H2 Gas Mixtures [J]. Chin. Phys. Lett., 1998, 15(11): 837-839. [10] MA Tian-fu, CHEN Kun-ji, DU Jia-fang, XU Jun, LI Wei, HUANG Xin-fan. Blue Light Emission from Hydrogenated Amorphous Silicon CarbidePrepared by Xylene Source in Plasma-Enhanced Chemical Vapour Deposition System [J]. Chin. Phys. Lett., 1996, 13(12): 947-949.