Room-Temperature Annealing of 1 MeV Electron Irradiated Lattice Matched In_0.53Ga_0.47As/InP Multiple Quantum Wells

Long-term room-temperature annealing effects of InGaAs/InP quantum wells with different wells (namely triple wells and five wells embedded) and bulk InGaAs are investigated after high energy electron irradiation. It is observed that the photoluminescence (PL) intensity of bulk InGaAs materials is enhanced after low dose electron irradiation and the PL intensity for all the three samples is degraded dramatically when the electron dose is relatively high. With respect to the room-temperature annealing, we find that the PL intensity for both samples recovers relatively fast at the initial stage. The PL performance of multiple quantum-well samples shows better recovery after irradiation compared with the results of bulk InGaAs materials. Meanwhile, the recovery speed factors of multiple quantum-well samples are relatively faster than those of the bulk InGaAs materials as well. We infer that the recovery difference between the quantum-well materials and bulk materials originates from the fact that the radiation induced defects are confined in the quantum wells as a consequence of the free energy barrier between the In_0.53Ga_0.47As wells and InP barrier layers.