Impact of Temperature Variation on Performance of Carbon Nanotube Field-Effect Transistor–Based on Chaotic Oscillator: A Quantum Simulation Study
-
Abstract
We evaluate the impact of temperature on the output behavior of a carbon nanotube field effect transistor (CNFET) based chaotic generator. The sources cause the variations in both current?voltage characteristics of the CNFET device and an overall chaotic circuit is pointed out. To verify the effect of temperature variation on the output dynamics of the chaotic circuit, a simulation is performed by employing the CNFET compact model of Wong et al. in HSPICE with a temperature range from -100°C to 100°C. The obtained results with time series, frequency spectra, and bifurcation diagram from the simulation demonstrate that temperature plays a significant role in the output dynamics of the CNFET-based chaotic circuit. Thus, temperature-related issues should be taken into account while designing a high-quality chaotic generator with high stability.
Article Text
-
-
-
About This Article
Cite this article:
Van Ha Nguyen, Hanjung Song. Impact of Temperature Variation on Performance of Carbon Nanotube Field-Effect Transistor–Based on Chaotic Oscillator: A Quantum Simulation Study[J]. Chin. Phys. Lett., 2015, 32(3): 038201. DOI: 10.1088/0256-307X/32/3/038201
Van Ha Nguyen, Hanjung Song. Impact of Temperature Variation on Performance of Carbon Nanotube Field-Effect Transistor–Based on Chaotic Oscillator: A Quantum Simulation Study[J]. Chin. Phys. Lett., 2015, 32(3): 038201. DOI: 10.1088/0256-307X/32/3/038201
|
Van Ha Nguyen, Hanjung Song. Impact of Temperature Variation on Performance of Carbon Nanotube Field-Effect Transistor–Based on Chaotic Oscillator: A Quantum Simulation Study[J]. Chin. Phys. Lett., 2015, 32(3): 038201. DOI: 10.1088/0256-307X/32/3/038201
Van Ha Nguyen, Hanjung Song. Impact of Temperature Variation on Performance of Carbon Nanotube Field-Effect Transistor–Based on Chaotic Oscillator: A Quantum Simulation Study[J]. Chin. Phys. Lett., 2015, 32(3): 038201. DOI: 10.1088/0256-307X/32/3/038201
|