High-Performance In_0.23Ga_0.77As Channel MOSFETs with High Current Ratio I_on/I_off Grown on Semi-insulating GaAs Substrates by MOCVD

We demonstrate high-performance In_0.23Ga_0.77As channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with I_on/I_offhigh on-current to off-current (I_on/I_off) ratio grown on semi-insulating GaAs wafers by metal-organic chemical vapor deposition (MOCVD). The 2 μm channel-length devices exhibit a peak extrinsic transconductance of 150 mS/mm and a drain current up to 500 mA/mm. The maximum effective mobility is 1680 cm²/Vs extracted by the split C–V method. Furthermore, the I_on/I_off ratio is significantly improved from approximately 4.5×10³ up to approximately 4.32×10⁴ by controlling the etch thickness of In_0.49Ga_0.51P. The high drain current and high I_on/I_off ratio of the In_0.23Ga_0.77As channel MOSFETs are achieved due to the high effective mobility and the low gate leakage current density.