Diode-Pumped c-Cut Nd:Lu0.99La0.01VO4 Self-Stimulated Raman Laser at 1181 nm
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Abstract
The self-stimulated Raman laser operation of a Nd:Lu0.99La0.01VO4 new crystal is presented. A 0.3 at.% Nd doped Lu0.99La0.01VO4 crystal in dimensions 3×3×20 mm3 is adopted as the self-stimulated Raman crystal. At a pulse repetition frequency of 14 kHz, average output powers of 240 mW for the first Stokes light at 1181 nm and 660 mW for the fundamental light at 1068 nm are obtained under an incident pump power of 5.5 W. The pulse widths of the first Stokes light and fundamental light are about 15 and 25 ns. The slope efficiencies are about 12.7% and 18.8% with respect to the incident pump power.
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CAI Wei-Yang, DUAN Yan-Min, LI Jiang-Tao, YAN Lin-Fei, MAO Meng-Jiao, ZHAO Bin, ZHU Hai-Yong. Diode-Pumped c-Cut Nd:Lu0.99La0.01VO4 Self-Stimulated Raman Laser at 1181 nm[J]. Chin. Phys. Lett., 2015, 32(3): 034206. DOI: 10.1088/0256-307X/32/3/034206
CAI Wei-Yang, DUAN Yan-Min, LI Jiang-Tao, YAN Lin-Fei, MAO Meng-Jiao, ZHAO Bin, ZHU Hai-Yong. Diode-Pumped c-Cut Nd:Lu0.99La0.01VO4 Self-Stimulated Raman Laser at 1181 nm[J]. Chin. Phys. Lett., 2015, 32(3): 034206. DOI: 10.1088/0256-307X/32/3/034206
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CAI Wei-Yang, DUAN Yan-Min, LI Jiang-Tao, YAN Lin-Fei, MAO Meng-Jiao, ZHAO Bin, ZHU Hai-Yong. Diode-Pumped c-Cut Nd:Lu0.99La0.01VO4 Self-Stimulated Raman Laser at 1181 nm[J]. Chin. Phys. Lett., 2015, 32(3): 034206. DOI: 10.1088/0256-307X/32/3/034206
CAI Wei-Yang, DUAN Yan-Min, LI Jiang-Tao, YAN Lin-Fei, MAO Meng-Jiao, ZHAO Bin, ZHU Hai-Yong. Diode-Pumped c-Cut Nd:Lu0.99La0.01VO4 Self-Stimulated Raman Laser at 1181 nm[J]. Chin. Phys. Lett., 2015, 32(3): 034206. DOI: 10.1088/0256-307X/32/3/034206
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