High Signal-to-Noise Ratio Hall Devices with a 2D Structure of Dual δ-Doped GaAs/AlGaAs for Low Field Magnetometry

Single and dual δ-doped GaAs/AlGaAs two-dimensional electron gas (2DEG) Hall devices for low magnetic field detection at room temperature are prepared. The sensitivity and noise spectrum of the Hall devices are measured for evaluating the signal-to-noise ratio performance. It is observed that the dual δ-doped Hall devices achieve a minimum detectable magnetic field as low as 303 nT, which is better than the single δ-doped Hall device prepared under the same growth condition.