Fabrication and Characterization of 1700 V 4H-SiC Vertical Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistors

The fabrication and characterization of 1700 V 7 A 4H-SiC vertical double-implanted metal-oxide-semiconductor field-effect transistors (VDMOSFETs) are reported. The drift layer is 17 μm in thickness with 5×10¹⁵ cm^?3 n-type doping, and the channel length is 1 μm. The MOSFETs show a peak mobility of 17 cm²/V?s and a typical threshold voltage of 3 V. The active area of 0.028 cm² delivers a forward drain current of 7 A at V_GS=22 V and V_DS=15 V. The specific on-resistance (R_on,sp) is 18 mΩ?cm² at V_GS=22 V and the blocking voltage is 1975 V (I_DS<100 nA) at V_GS=0 V.