Morphology and Microstructure of InAs Nanowires on GaAs Substrates Grown by Molecular Beam Epitaxy

We successfully grow high-quality wurtzite InAs nanowires on GaAs substrates. The influences of growth temperature and orientations of GaAs substrates on the morphology and microstructure of InAs nanowires are also investigated. We find that a low growth temperature (330°C) is beneficial to the synthesis of uniform defect-free InAs nanowires. Meanwhile, InAs nanowires along ?111?B direction are always dominated despite the variation of GaAs substrate orientations.