Current Induced Non-Volatile Resistive Switching Effect in Silicon Devices with Large Magnetoresistance

We develop a non-volatile resistive switching device in a Si–SiO₂–Mg structure with an on/off ratio of about 4.5 at a certain transition voltage after being stimulated by a large current. It is observed that the resistance transition voltage V_t shifts reproducibly under a reversed large current. By applying a reading voltage in the range of V_t, non-volatile resistive switching phenomena with an endurance of more than 80 cycles are observed. Moreover, it is also found that the magnetic field could shift V_t to higher values, yielding a voltage dependent room-temperature magnetoresistance in the range of 10³% at 1 T. The multifunctional properties of the silicon device suggested by this work may be beneficial to the silicon based industry.