The Distinguished Charge-Trapping Capability of the Memory Device with Al₂O₃-Cu₂O Composite as the Charge Storage Layer

A memory device Si/Al₂O₃/Al₂O₃-Cu₂O/Al₂O₃/Pt is fabricated by using atomic layer deposition and rf-magnetron sputtering techniques. The memory device including the composite of Al₂O₃ and Cu₂O as the charge storage layer shows a distinguished charge trapping capability. At a working voltage of ±11 V a memory window of 9.22 V is obtained. The x-ray photoelectron spectroscopic study shows a shoulder from Cu²⁺ ions around the peak of Cu¹⁺ ions. It is suggested that the charge-trapping mechanism should be attributed to the defect states formed by the inter-diffusion at the interface of two oxides.