High Power 1060 nm Distributed Feedback Semiconductor Laser

A GaAs based high power distributed feedback (DFB) semiconductor laser with a second-order grating has been demonstrated. An output power of 150 mW at an injection current of 350 mA is realized with a 1-mm cavity length. With a new design of the waveguide structure, the DFB laser maintains a stable single longitudinal mode around 1060 nm with a side mode suppression ratio of larger than 50 dB.