Synthesis and Optical Properties of InP Semiconductor Nanocombs
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Abstract
InP semiconductor nanocombs are successfully synthesized by the chemical vapor deposition method. The detailed morphology and crystalline structures of the products are characterized by x-ray diffraction, transmission electron microscopy and high resolution transmission electron microscopy. The optical properties of InP nanocombs, including Raman and photoluminescence spectra, are studied. The possible growth mechanism of InP nanocombs is briefly discussed.
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YU Yan-Long, ZHAO Yi-Song, GAO Fa-Ming. Synthesis and Optical Properties of InP Semiconductor Nanocombs[J]. Chin. Phys. Lett., 2014, 31(12): 128103. DOI: 10.1088/0256-307X/31/12/128103
YU Yan-Long, ZHAO Yi-Song, GAO Fa-Ming. Synthesis and Optical Properties of InP Semiconductor Nanocombs[J]. Chin. Phys. Lett., 2014, 31(12): 128103. DOI: 10.1088/0256-307X/31/12/128103
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YU Yan-Long, ZHAO Yi-Song, GAO Fa-Ming. Synthesis and Optical Properties of InP Semiconductor Nanocombs[J]. Chin. Phys. Lett., 2014, 31(12): 128103. DOI: 10.1088/0256-307X/31/12/128103
YU Yan-Long, ZHAO Yi-Song, GAO Fa-Ming. Synthesis and Optical Properties of InP Semiconductor Nanocombs[J]. Chin. Phys. Lett., 2014, 31(12): 128103. DOI: 10.1088/0256-307X/31/12/128103
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