Enhanced Total Ionizing Dose Hardness of Deep Sub-Micron Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors by Applying Larger Back-Gate Voltage Stress
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Abstract
The larger back-gate voltage stress is applied on 130 nm partially depleted silicon-on-insulator n-type metal-oxide-semiconductor field-effect transistors isolated by shallow trench isolation. The experimental results show that the back-gate sub-threshold hump of the device is eliminated by stress. This observed behavior is caused by the high electric field in the oxide near the bottom corner of the silicon island. The total ionizing dose hardness of devices with pre back-gate stress is enhanced by the interface states induced by stress. -
References
[1] Schwank J R, Cavrois V F and Shaneyfelt M R 2003 IEEE Trans. Nucl. Sci. 50 522 doi: 10.1109/TNS.2003.812930 [2] Bi J S, Liu G, Luo J J and Han Z S 2013 Acta Phys. Sin. 62 208501 (in Chinese) [3] Zhang Y W, Huang H X, Bi D W, Tang M H and Zhang Z X 2014 Nucl. Instrum. Methods Phys. Res. Sect. A 745 128 [4] Ning B X, Hu Z Y, Zhang Z X, Bi D W, Huang H X, Dai R F, Zhang Y W and Zou S C 2013 Acta Phys. Sin. 62 076104 [5] Huang H X, Bi D W, Peng C, Zhang Y W and Zhang Z X 2013 Chin. Phys. Lett. 30 080701 [6] Melanie J S, Isabel Y Y, Dimitri A A and Brian S D 1996 Proceedings 1996 IEEE International SOI Conference (Sanibel Island, FL 30 September–03 October 1996) p 84 [7] Mei B, Bi J S, Li D L, Liu S and Han Z S 2012 J. Semicond. 33 024002 [8] Ning B X, Bi D W, Huang H X, Zhang Z X, Chen M and Zhou S C 2013 Microelectron. J. 44 86 [9] Ning B X, Bi D W, Huang H X, Zhang Z X, Hu Z Y, Chen M and Zhou S C 2013 Microelectron. Reliab. 53 259 [10] Jeffrey W S, Chuan L and Gregory 1999 IEEE Electron Device Lett. 20 248 [11] Snow E H 1967 Solid State Commun. 5 813 [12] Ravindra N M and Zhao J 1992 Smart Mater. Struct. 1 197 [13] Zhang G Q, Yan R L, Yu X F, Gao J X and Ren D Y 1998 Chin. J. Semicond. 19 616 (in Chinese) [14] Masao I and Shirafuji J J 1995 Jpn. J. Appl. Phys. 34 L1315 [15] Turowski M, Raman A and Schrimpf R D 2004 IEEE Trans. Nucl. Sci. 51 3166 -
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