Mobility Enhancement and Gate-Induced-Drain-Leakage Analysis of Strained-SiGe Channel p-MOSFETs with Higher-κ LaLuO₃ Gate Dielectric

A strained-SiGe p-channel metal-oxide-semiconductor-field-effect transistors (p-MOSFETS) with higher-κ LaLuO₃ gate dielectric was fabricated and electrically characterized. The novel higher-κ (κ～30) gate dielectric, LaLuO₃, was deposited by molecular-beam deposition and shows good quality for integration into the transistor. The transistor features good output and transfer characteristics. The hole mobility was extracted by the splitting C–V method and a value of 200 cm²/V?s was obtained for strong inversion conditions, which indicates that the hole mobility is well enhanced by SiGe channel and that the LaLuO₃ layer does not induce additional significant carrier scattering. Gate induced drain leakage is measured and analyzed by using an analytical model. Band-to-band tunneling efficiencies under high and low fields are found to be different, and the tunneling mechanism is discussed.