1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
2Peter Grünberg Institute 9 (PGI 9), Forschungszentrum Jülich and JARA Fundamentals of Future Intormation Technology, 52425 Jülich, Germany
A strained-SiGe p-channel metal-oxide-semiconductor-field-effect transistors (p-MOSFETS) with higher-κ LaLuO3 gate dielectric was fabricated and electrically characterized. The novel higher-κ (κ～30) gate dielectric, LaLuO3, was deposited by molecular-beam deposition and shows good quality for integration into the transistor. The transistor features good output and transfer characteristics. The hole mobility was extracted by the splitting C–V method and a value of 200 cm2/V?s was obtained for strong inversion conditions, which indicates that the hole mobility is well enhanced by SiGe channel and that the LaLuO3 layer does not induce additional significant carrier scattering. Gate induced drain leakage is measured and analyzed by using an analytical model. Band-to-band tunneling efficiencies under high and low fields are found to be different, and the tunneling mechanism is discussed.
von Haartman M, Malm B G and Ostling M 2006 IEEE Trans. Electron Devices 53 836 doi: 10.1109/TED.2006.870276
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