The Microwave Characteristics of an In_0.4Ga_0.6As Metal-Oxide-Semiconductor Field-Effect Transistor with an In_0.49Ga_0.51P Interfacial Layer

A high microwave performance enhancement-mode (E-mode) In_0.4Ga_0.6As channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a Si-doped In_0.49Ga_0.51P interfacial layer is fabricated. A 0.8-μm-gate-length In_0.4Ga_0.6As MOSFET with a 5-nm Al₂O₃ dielectric layer provides a current gain cutoff frequency of 16.7 GHz and a maximum oscillation frequency of 52 GHz. A semi-empirical small-signal-parameter extraction technique accounting for the low frequency anomaly of this MOSFET device is described, which is based on on-wafer S-parameter measurements. Excellent agreement between measured and simulated scattering parameters as well as the physically realistic circuit elements demonstrates the validity of this approach.