Characterization of HfSiAlON/MoAlN PMOSFETs Fabricated by Using a Novel Gate-Last Process

We fabricate p-channel metal-oxide-semiconductor-field-effect-transistors (PMOSFETs) with a HfSiAlON/MoAlN gate stack using a novel and practical gate-last process. In the process, SiO₂/poly-Si is adopted as the dummy gate stack and replaced by an HfSiAlON/MoAlN gate stack after source/drain formation. Because of the high-k/metal-gate stack formation after the 1000°C source/drain ion-implant doping activation, the fabricated PMOSFET has good electrical characteristics. The device's saturation driving current is 2.71×10^?4 A/μm (V_GS=V_DS=?1.5 V) and the off-state current is 2.78×10^?9 A/μm. The subthreshold slope of 105 mV/dec (V_DS=?1.5 V), drain induced barrier lowering of 80 mV/V and V_th of ?0.3 V are obtained. The research indicates that the present PMOSFET could be a solution for high performance PMOSFET applications.