Reduction of Efficiency Droop and Modification of Polarization Fields of InGaN-Based Green Light-Emitting Diodes via Mg-Doping in the Barriers

We demonstrate that the Mg-doping in barriers can partially screen the polarization fields of InGaN-based green light-emitting diodes. The photocurrent spectra show that the Mg-doping samples have smaller polarization fields and the blue shift of the peak with increasing current is observed. The reduction of polarization fields can be attributed to the screening of the impurity holes generated by the Mg atoms in the barriers. The efficiency droop is sensitive to the Mg-doping concentration in barriers, while the sample with Mg concentration of 5×10¹⁹ cm^?3 exhibits the lowest efficiency degradation of 12.4% at a high injection current.