The Growth and Fabrication of InGaN/GaN Multi-Quantum Well Solar Cells on Si(111) Substrates

Metalorganic chemical vapor deposition of a crack-free mirror-like surface of InGaN/GaN MQWs on Si (111) substrate is demonstrated, and an InGaN/GaN MQWs solar cell device is fabricated. Photo response measurement of the solar cell devices shows that the fill factor FF = 49.4%, open circuit voltage V_oc=0.32 V, and short circuit current J_sc=0.07 mA/cm², under AM 1.5 G illumination. In order to analyze the influence of material quality on the performance of solar cells, XRD, SEM and Raman scattering experiments are carried out. It is found that insertion of a proper top AlN layer can effectively improve the material quality, and therefore enhance the photovoltaic performance of the fabricated device.