InAs/InGaAsP/InP Quantum Dot Lasers Grown by Metalorganic Chemical Vapor Deposition

We demonstrate InAs/InGaAsP/InP quantum dot (QD) lasers grown by metalorganic chemical vapor deposition. The active region of the lasers consists of five layers of InAs QDs. Ridge waveguide lasers with 6 μm width have been fabricated by standard optical lithography and wet etching. Under continuous wave operation at room temperature, a low threshold current density of 447 A/cm² per QD layer is achieved for a QD laser with a cavity length of 2 mm. Moreover, the lasing redshifts from 1.61 μm to 1.645 μm as the cavity length increases from 1.5 mm to 4 mm. A high characteristic temperature of up to 88 K is obtained in the temperature range between 10°C and 40°C.