InGaN-Based Blue Light Emitting Diodes with AlInN-GaN-AlInN Electron Blocking Layers

A three-layer p-type Al_0.82In_0.18N–GaN–Al_0.82In_0.18N electron blocking layer (EBL) is designed to replace the original p-type AlGaN EBL in blue light emitting diodes (LEDs). The fabricated LEDs with Al_0.82In_0.18N–GaN–Al_0.82In_0.18N EBLs exhibit enhanced light output power and an alleviated efficiency drop compared to the original EBL. The improved performance is attributed to more effective electron confinement by this specially designed EBL and improved crystalline quality in the InGaN/GaN active region.