The Valence Band Offset of an Al0.17Ga0.83N/GaN Heterojunction Determined by X-Ray Photoelectron Spectroscopy

  • The valence band offset (VBO) of an Al0.17Ga0.83N/GaN heterojunction is determined to be 0.13±0.07 eV by x-ray photoelectron spectroscopy. From the obtained VBO value, the conduction band offset (CBO) of ~0.22 eV is obtained. The results indicate that the Al0.17Ga0.83N/GaN heterojunction exhibits a type-I band alignment.
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