The Valence Band Offset of an Al0.17Ga0.83N/GaN Heterojunction Determined by X-Ray Photoelectron Spectroscopy
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WAN Xiao-Jia,
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WANG Xiao-Liang,
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XIAO Hong-Ling,
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WANG Cui-Mei,
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FENG Chun,
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DENG Qing-Wen,
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QU Shen-Qi,
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ZHANG Jing-Wen,
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HOU Xun,
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CAI Shu-Jun,
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FENG Zhi-Hong
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Abstract
The valence band offset (VBO) of an Al0.17Ga0.83N/GaN heterojunction is determined to be 0.13±0.07 eV by x-ray photoelectron spectroscopy. From the obtained VBO value, the conduction band offset (CBO) of ~0.22 eV is obtained. The results indicate that the Al0.17Ga0.83N/GaN heterojunction exhibits a type-I band alignment.
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WAN Xiao-Jia, WANG Xiao-Liang, XIAO Hong-Ling, WANG Cui-Mei, FENG Chun, DENG Qing-Wen, QU Shen-Qi, ZHANG Jing-Wen, HOU Xun, CAI Shu-Jun, FENG Zhi-Hong. The Valence Band Offset of an Al0.17Ga0.83N/GaN Heterojunction Determined by X-Ray Photoelectron Spectroscopy[J]. Chin. Phys. Lett., 2013, 30(5): 057101. DOI: 10.1088/0256-307X/30/5/057101
WAN Xiao-Jia, WANG Xiao-Liang, XIAO Hong-Ling, WANG Cui-Mei, FENG Chun, DENG Qing-Wen, QU Shen-Qi, ZHANG Jing-Wen, HOU Xun, CAI Shu-Jun, FENG Zhi-Hong. The Valence Band Offset of an Al0.17Ga0.83N/GaN Heterojunction Determined by X-Ray Photoelectron Spectroscopy[J]. Chin. Phys. Lett., 2013, 30(5): 057101. DOI: 10.1088/0256-307X/30/5/057101
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WAN Xiao-Jia, WANG Xiao-Liang, XIAO Hong-Ling, WANG Cui-Mei, FENG Chun, DENG Qing-Wen, QU Shen-Qi, ZHANG Jing-Wen, HOU Xun, CAI Shu-Jun, FENG Zhi-Hong. The Valence Band Offset of an Al0.17Ga0.83N/GaN Heterojunction Determined by X-Ray Photoelectron Spectroscopy[J]. Chin. Phys. Lett., 2013, 30(5): 057101. DOI: 10.1088/0256-307X/30/5/057101
WAN Xiao-Jia, WANG Xiao-Liang, XIAO Hong-Ling, WANG Cui-Mei, FENG Chun, DENG Qing-Wen, QU Shen-Qi, ZHANG Jing-Wen, HOU Xun, CAI Shu-Jun, FENG Zhi-Hong. The Valence Band Offset of an Al0.17Ga0.83N/GaN Heterojunction Determined by X-Ray Photoelectron Spectroscopy[J]. Chin. Phys. Lett., 2013, 30(5): 057101. DOI: 10.1088/0256-307X/30/5/057101
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