Strained Germanium-Tin pMOSFET Fabricated on a Silicon-on-Insulator Substrate with Relaxed Ge Buffer

Germanium-tin (Ge_1?xSn_x) p-type metal-oxide-semiconductor field effect transistors (pMOSFETs) were fabricated using a strained Ge_0.985Sn_0.015 thin film that was epitaxially grown on a silicon-on-insulator substrate with a relaxed Ge buffer layer. The Ge buffer was deposited using a two-step chemical vapor deposition growth technique. The high quality Ge_0.985Sn_0.015 layer was grown by solid source molecular beam epitaxy. Ge_0.985Sn_0.015 pMOSFETs with Si surface passivation, TaN/HfO₂ gate stack, and nickel stanogermanide Ni(Ge_1?xSn_x) source/drain were fabricated on the grown substrate. The device achieves an effective hole mobility of 182 cm²/V?s at an inversion carrier density of 1×10¹³ cm^?2.