Electrical Characteristics of High Mobility Si/Si_0.5Ge_0.5/SOI Quantum-Well p-MOSFETs with a Gate Length of 100 nm and an Equivalent Oxide Thickness of 1.1 nm

Short-channel high-mobility Si/Si_0.5Ge_0.5/silicon-on-insulator (SOI) quantum-well p-type metal-oxide-semiconductor field effect transistors (p-MOSFETs) were fabricated and electrically characterized. The transistors show good transfer and output characteristics with I_on/I_off ratio up to 10⁵ and sub-threshold slope down to 100 mV/dec. HfO₂/TiN gate stack is employed and the equivalent oxide thickness of 1.1 nm is achieved. The effective hole mobility of the transistors reaches 200 cm²/V?s, which is 2.12 times the Si universal hole mobility.