Bulk Heterojunction Photovoltaic Devices Based on a Poly(2-Methoxy, 5-Octoxy)-1, 4-Phenylenevinylene-Single Walled Carbon Nanotube-ZnSe Quantum Dots Active Layer
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Abstract
A solution-processed bulk heterojunction photovoltaic cell is fabricated based on poly(2-methoxy, 5-octoxy)-1, 4-phenylenevinylene(MOPPV)-single walled carbon nanotube(SWNT)-ZnSe quantum dots. The surface morphology shows the formation of an interpenetrating network between well-dispersed SWNTs and ZnSe in the MOPPV matrix. A blue-shifted absorption band indicates the strong electron interaction between SWNTs, ZnSe and MOPPV. A marked increase in the short-circuit current and power conversion efficiency (PCE) of ITO/PEDOT:PSS/MOPPV-SWNT-ZnSe/LiF/Al devices was achieved and compared with that without SWNTs. Results indicate that the enhanced performance is contributed by a high photocurrent due to efficient exciton dissociation and increased mobility for carrier transport in the SWNT pathway.
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QU Jun-Rong, ZHENG Jian-Bang, WU Guang-Rong, CAO Chong-De. Bulk Heterojunction Photovoltaic Devices Based on a Poly(2-Methoxy, 5-Octoxy)-1, 4-Phenylenevinylene-Single Walled Carbon Nanotube-ZnSe Quantum Dots Active Layer[J]. Chin. Phys. Lett., 2013, 30(10): 107801. DOI: 10.1088/0256-307X/30/10/107801
QU Jun-Rong, ZHENG Jian-Bang, WU Guang-Rong, CAO Chong-De. Bulk Heterojunction Photovoltaic Devices Based on a Poly(2-Methoxy, 5-Octoxy)-1, 4-Phenylenevinylene-Single Walled Carbon Nanotube-ZnSe Quantum Dots Active Layer[J]. Chin. Phys. Lett., 2013, 30(10): 107801. DOI: 10.1088/0256-307X/30/10/107801
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QU Jun-Rong, ZHENG Jian-Bang, WU Guang-Rong, CAO Chong-De. Bulk Heterojunction Photovoltaic Devices Based on a Poly(2-Methoxy, 5-Octoxy)-1, 4-Phenylenevinylene-Single Walled Carbon Nanotube-ZnSe Quantum Dots Active Layer[J]. Chin. Phys. Lett., 2013, 30(10): 107801. DOI: 10.1088/0256-307X/30/10/107801
QU Jun-Rong, ZHENG Jian-Bang, WU Guang-Rong, CAO Chong-De. Bulk Heterojunction Photovoltaic Devices Based on a Poly(2-Methoxy, 5-Octoxy)-1, 4-Phenylenevinylene-Single Walled Carbon Nanotube-ZnSe Quantum Dots Active Layer[J]. Chin. Phys. Lett., 2013, 30(10): 107801. DOI: 10.1088/0256-307X/30/10/107801
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