Ultrafast and Broadband Terahertz Switching Based on Photo-Induced Phase Transition in Vanadium Dioxide Films
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Abstract
Single-phase VO2 thin films are sputtering deposited on BK7 substrates, and sharp insulator-to-metal phase transition is obtained with a resistivity change of four orders of magnitude. Terahertz (THz) pump-probe measurements reveal that by illuminating the films with a low pumping power of 143 μJ/cm2, VO2 films exhibit an ultrafast optical switching to THz transmission within 8 ps. Furthermore, the THz switching ratio reaches over 80% in a wide frequency range from 0.3 to 2.5 THz. All these outstanding features indicate a strong potential of VO2 films for broadband terahertz wave switching and modulation applications.
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CHEN Zhi, WEN Qi-Ye, DONG Kai, SUN Dan-Dan, QIU Dong-Hong, ZHANG Huai-Wu. Ultrafast and Broadband Terahertz Switching Based on Photo-Induced Phase Transition in Vanadium Dioxide Films[J]. Chin. Phys. Lett., 2013, 30(1): 017102. DOI: 10.1088/0256-307X/30/1/017102
CHEN Zhi, WEN Qi-Ye, DONG Kai, SUN Dan-Dan, QIU Dong-Hong, ZHANG Huai-Wu. Ultrafast and Broadband Terahertz Switching Based on Photo-Induced Phase Transition in Vanadium Dioxide Films[J]. Chin. Phys. Lett., 2013, 30(1): 017102. DOI: 10.1088/0256-307X/30/1/017102
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CHEN Zhi, WEN Qi-Ye, DONG Kai, SUN Dan-Dan, QIU Dong-Hong, ZHANG Huai-Wu. Ultrafast and Broadband Terahertz Switching Based on Photo-Induced Phase Transition in Vanadium Dioxide Films[J]. Chin. Phys. Lett., 2013, 30(1): 017102. DOI: 10.1088/0256-307X/30/1/017102
CHEN Zhi, WEN Qi-Ye, DONG Kai, SUN Dan-Dan, QIU Dong-Hong, ZHANG Huai-Wu. Ultrafast and Broadband Terahertz Switching Based on Photo-Induced Phase Transition in Vanadium Dioxide Films[J]. Chin. Phys. Lett., 2013, 30(1): 017102. DOI: 10.1088/0256-307X/30/1/017102
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