A Self-Aligned Process to Fabricate a Metal Electrode-Quantum Dot/Nanowire-Metal Electrode Structure with 100% Yield

Using lateral phase change random access memory (PCRAM) for demonstration, we report a self-aligned process to fabricate a metal electrode-quantum dot(QD)/nanowire(NW)-metal electrode structure. Due to the good confinement and coupling between the Ge₂Sb₂Te₅ (GST) QD and the tungsten electrodes, the device shows a threshold current and voltage as small as 2.50 μA and 1.08 V, respectively. Our process is highlighted with good controllability and repeatability with 100% yield, making it a promising fabrication process for nanoelectronics.