A Drain Current Model Based on the Temperature Effect of a-Si:H Thin-Film Transistors

Based on the differential Ohm's law and Poisson's equation, an analytical model of the drain current for a-Si:H thin-film transistors is developed. This model is proposed to elaborate the temperature effect on the drain current, which indicates that the drain current is linear with temperature in the range of 290–360 K, and the results fit well with the experimental data.