[1] |
Holt D B and Yacobi B G 2007 Extended Defects in Semiconductors: Electronic Properties, Device Effects and Structure (Cambridge: Cambridge University) doi: 10.1017/CBO9780511534850
|
[2] |
Yankovich A B, Puchala B, Wang F, Seo J H, Morgan D, Wang X, Ma Z, Kvit A V and Voyles P M 2012 Nano Lett. 12 1311
|
[3] |
Weissenberger D, Duerrschnabel M, Gerthsen D, Perez-Willard F, Reiser A, Prinz G M, Feneberg M, Thonke K and Sauer R 2007 Appl. Phys. Lett. 91 132110
|
[4] |
Ding Y, Gao P X and Wang Z L 2004 J. Am. Chem. Soc. 126 2066
|
[5] |
Dadgar A, Krtschil A, Bertram F, Giemsch S, Hempel T, Veit P, Diez A, Oleynik N, Clos R, Christen J and Krost A 2005 Superlattice. Microstruct. 38 245
|
[6] |
Cavallini A, Polenta L, Rossi M, Richter T, Marso M, Meijers R, Calarco R and Lüth H 2006 Nano Lett. 6 1548
|
[7] |
Kelzenberg M D, Turner-Evans D B, Kayes B M, Filler M A, Putnam M C, Lewis N S and Atwater H A 2008 Nano Lett. 8 710
|
[8] |
Park W, Jo G, Hong W K, Yoon J, Choe M, Lee S, Ji Y, Kim G, Kahng Y H, Lee K, Wang D L and Lee T 2011 Nanotechnology 22 205204
|
[9] |
Oh Y M, Lee K M, Park K H, Kim Y, Ahn Y H, Park J Y and Lee S 2007 Nano Lett. 7 3681
|
[10] |
Schirra M, Reiser A, Prinz G M, Ladenburger A, Thonke K and Sauer R 2007 J. Appl. Phys. 101 113509
|
[11] |
Schirra M, Feneberg M, Prinz G M, Reiser A, Roder T, Thonke K and Sauer R 2009 Phys. Rev. Lett. 102 073903
|
[12] |
Ye J D, Zhao H, Liu W, Gu S L, Zhang R, Zheng Y D, Tan S T, Sun X W, Lo G Q and Teo K L 2008 Appl. Phys. Lett. 92 131914
|
[13] |
Gao M, Cheng R, Li W, Li Y, Zhang X and Xie S 2010 J. Phys. Chem. C 114 11081
|
[14] |
Gargas D J, Toimil-Molares M E and Yang P D 2009 J. Am. Chem. Soc. 131 2125
|
[15] |
Klingshirn C F, Meyer B K, AndreasWaag, Hoffmann A and Geurts J 2010 Zinc Oxide: From Fundamental Properties Towards Novel Applications (Berlin: Springer)
|
[16] |
Willander M, Nur O, Zhao Q X, Yang L L, Lorenz M, Cao B Q, Z J, Grundmann M, Bakin A, Behrends A, Mofor A C, Postels B, Waag A, Boukos N, Travlos A, Kwack H S, Guinard J and Dang D L S 2009 Nanotechnology 20
|
[17] |
Wang Z L 2009 Mater. Sci. Eng.: R: Reports 64 33
|
[18] |
Morko? H and ?zgür ü 2007 Zinc Oxide: Fundamentals, Materials and Device Technology (Weinheim: Wiley-VCH)
|
[19] |
Li Y J, Feneberg M, Reiser A, Schirra M, Enchelmaier R, Ladenburger A, Langlois A, Sauer R, Thonke K, Cai J and Rauscher H 2006 J. Appl. Phys. 99 054307
|
[20] |
McCluskey M D and Jokela S J 2009 J. Appl. Phys. 106 071101
|
[21] |
Travnikov V V, Freiberg A and Savikhin S F 1990 J. Lumin. 47 107
|
[22] |
Meyer B K, Alves H, Hofmann D M, Kriegseis W, Forster D, Bertram F, Christen J, Hoffmann A, Strassburg M, Dworzak M, Haboeck U and Rodina A V 2004 Phys. Status Solidi B 241 231
|
[23] |
Xie Y, Madel M, Zoberbier T, Reiser A, Jie W, Neuschl B, Biskupek J, Kaiser U, Feneberg M and Thonke K 2012 Appl. Phys. Lett. 100 182101
|
[24] |
Drouin D, Couture A R, Joly D, Tastet X, Aimez V and Gauvin R 2007 Scanning 29 92
|
[25] |
Schirra M, Schneider R, Reiser A, Prinz G M, Feneberg M, Biskupek J, Kaiser U, Krill C E, Thonke K and Sauer R 2008 Phys. Rev. B 77 125215
|
[26] |
Fan H J, Scholz R, Zacharias M, Gosele U, Bertram F, Forster D and Christen J 2005 Appl. Phys. Lett. 86 023113
|
[27] |
Allen J E, Hemesath E R, Perea D E, Lensch-Falk J L, Li Z Y, Yin F, Gass M H, Wang P, Bleloch A L, Palmer R E and Lauhon L J 2008 Nature Nanotech. 3 168
|
[28] |
Yan Y, Dalpian G M, Al-Jassim M M and Wei S H 2004 Phys. Rev. B 70 193206
|