Growth-induced Stacking Faults of ZnO Nanorods Probed by Spatial Resolved Cathodoluminescence

  • Received Date: April 05, 2012
  • Revised Date: June 28, 2012
  • Published Date: June 30, 2012
  • Low density ZnO nanorods are grown by modified chemical vapor deposition on silicon substrates using gold as a catalyst. We use high resolution photoluminescence spectroscopy to gain the optical properties of these nanorods in large scale. The as-grown samples show sharp near-band-gap luminescence with a full width at half maximum of bound exciton peaks at about 300 µeV, and the ratio of ultraviolet/yellow luminescence larger than 100. Highly spatial and spectral resolved scanning electron microscope-cathodoluminescence is performed to excite the ZnO nanorods in single rods or different positions of single rods with the vapour-solid growth mechanism. The bottom of the nanorod has a 3.31-eV luminescence, which indicates that basal plane stacking faults are related to the defects that are created at the first stage of growth due to the misfit between ZnO and Si.
  • Article Text

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