Metalorganic Chemical Vapor Deposition Growth of InAs/GaSb Superlattices on GaAs Substrates and Doping Studies of P-GaSb and N-InAs

InAs/GaSb type-II superlattices (SLs), Zn-doped GaSb and Si-doped InAs were grown on semi-insulating (001) GaAs substrates by metalorganic chemical vapor deposition. X-ray diffraction reveals that complete strain compensation between the SLs and the GaSb buffer layer is achieved in our SL samples. The relationship between the hole concentration p in GaSb and the diethylzinc (DEZn) flow rate is p∝DEZn^0.57. The electron concentration in InAs does not show good linearity with the SiH₄ flow rate. The growth rate of the p-GaSb epilayer is decreased as the DEZn mole fraction increases, while the growth rate of the n-InAs epilayer is weakly dependent on the SiH₄ flow rate.