Ultrashort Pulse Generation at Quasi-40-GHz by Using a Two-Section Passively Mode-Locked InGaAsP-InP Tensile Strained Quantum-Well Laser
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Received Date:
June 13, 2011
Revised Date:
December 31, 1899
Published Date:
January 31, 2012
Abstract
A 1.56 µm passively mode-locked laser diode with a two-section tensile strained multi-quantum-well structure is fabricated. Without any external pulse compression, a Lorentz pulse train with a pulse width of 1.03 ps and a repetition rate of 35.6 GHz is obtained, which is one of the best results that have been reported on similar devices. The optical pulse has a 300 kHz line width and a 50 dB peak over the noise floor in the photodetected radio-frequency electrical spectrum.
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Cite this article:
KONG Duan-Hua, ZHU Hong-Liang, LIANG Song, QIU Ji-Fang, ZHAO Ling-Juan. Ultrashort Pulse Generation at Quasi-40-GHz by Using a Two-Section Passively Mode-Locked InGaAsP-InP Tensile Strained Quantum-Well Laser[J].
Chin. Phys. Lett. , 2012, 29(2): 024201.
DOI: 10.1088/0256-307X/29/2/024201
KONG Duan-Hua, ZHU Hong-Liang, LIANG Song, QIU Ji-Fang, ZHAO Ling-Juan. Ultrashort Pulse Generation at Quasi-40-GHz by Using a Two-Section Passively Mode-Locked InGaAsP-InP Tensile Strained Quantum-Well Laser[J]. Chin. Phys. Lett. , 2012, 29(2): 024201. DOI: 10.1088/0256-307X/29/2/024201
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