The Structural and Electrical Properties of Al/Pb(Zr_0.52Ti_0.48)O₃/Al₂O₃/Si with an Al₂O₃ Layer Prepared by using the Molecular Atomic Deposition Method

The structural and electrical properties of a metal-ferroelectric-insulator-semiconductor (MFIS) structure with an Al₂O₃ layer prepared by using the molecular atomic deposition method and Pb(Zr_0.52Ti_0.48)O₃ (PZT) deposited by the radio frequency magnetron sputtering method are investigated. PZT exhibits a very smooth surface and (110) orientation of the perovskite phase. The MFIS structure shows well-behaved clockwise capacitance-voltage hysteresis loops due to the ferroelectric polarization under a sweep voltage up to ±40 V. Memory windows of 1.9 V and 18.14 V in conjunction with leakage current density of 2.42×10^?7 A/cm² and 8.28×10^?7 A/cm² are obtained under sweep voltages of ±5 V and ±20 V, respectively.