Onset for the Electron Velocity Overshoot in Indium Nitride

A theoretical study on the electron drift velocity and electron nonequilibrium temperature of indium nitride (InN) is presented. It is based on a nonlinear quantum kinetic theory which provides a description of the dissipative phenomena developing in the system. The ultrafast time evolution of the electron drift velocity and electron nonequilibrium temperature is obtained, and overshoot effects are evidenced on both of them. The overshoot onsets are shown to occur at 4 kV/cm, electric field intensity which is considerably smaller than those recently derived by resorting to Monte Carlo simulations.