The Electric Mechanism of Surface Pretreatments for Dye-Sensitized Solar Cells Based on Internal Equivalent Resistance Analysis
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Abstract
Based on the optimization of dye-sensitized solar cell (DSC) photoelectrodes pretreated with different methods such as electrodeposition, spin-coating and TiCl4 pretreatment, theoretical calculations are carried out to interpret the internal electric mechanism. The numerical values, including the series resistance Rs and the shunt resistance Rsh corresponding to the equivalent circuit model, are well evaluated and confirm that the DSC has good performance with a high Rsh and a low Rs due to good electrical contact and a low charge recombination after the different modifications. The I–V curves are fitted in the case without series resistance, and account for the role of Rs in the output characteristics. It is found that when Rs tends to the infinitesimal, the short−circuit current Isc, the open−circuit voltage Voc and the fill factor can be improved by almost 0.8–1.4, 2.9 and 2.1–6.8%, respectively.
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XU Wei-Wei, HU Lin-Hua, LUO Xiang-Dong, LIU Pei-Sheng, DAI Song-Yuan. The Electric Mechanism of Surface Pretreatments for Dye-Sensitized Solar Cells Based on Internal Equivalent Resistance Analysis[J]. Chin. Phys. Lett., 2012, 29(1): 018401. DOI: 10.1088/0256-307X/29/1/018401
XU Wei-Wei, HU Lin-Hua, LUO Xiang-Dong, LIU Pei-Sheng, DAI Song-Yuan. The Electric Mechanism of Surface Pretreatments for Dye-Sensitized Solar Cells Based on Internal Equivalent Resistance Analysis[J]. Chin. Phys. Lett., 2012, 29(1): 018401. DOI: 10.1088/0256-307X/29/1/018401
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XU Wei-Wei, HU Lin-Hua, LUO Xiang-Dong, LIU Pei-Sheng, DAI Song-Yuan. The Electric Mechanism of Surface Pretreatments for Dye-Sensitized Solar Cells Based on Internal Equivalent Resistance Analysis[J]. Chin. Phys. Lett., 2012, 29(1): 018401. DOI: 10.1088/0256-307X/29/1/018401
XU Wei-Wei, HU Lin-Hua, LUO Xiang-Dong, LIU Pei-Sheng, DAI Song-Yuan. The Electric Mechanism of Surface Pretreatments for Dye-Sensitized Solar Cells Based on Internal Equivalent Resistance Analysis[J]. Chin. Phys. Lett., 2012, 29(1): 018401. DOI: 10.1088/0256-307X/29/1/018401
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