Epitaxial Growth of 4H-SiC on 4° Off-Axis Substrate for Power Devices

Homo-epitaxial layers are successfully grown on Si-face 4° off−axis 4H-SiC substrates using the horizontal hot-wall chemical vapor deposition system. The smooth surface without morphological defects is obtained by the optimized in situ etching process and growth temperature. Schottky diodes fabricated on the epilayer present a typical I–V characteristic. This is the first report of Schottky diodes fabricated on 4° off-axis 4H-SiC substrates made in China.