Rectifying Characteristics and Transport Behavior in a Schottky Junction of CaCu ₃Ti₄O₁₂ and Pt

CaCu₃Ti₄O₁₂ (CCTO) thin films were fabricated on ITO−covered MgO (100) substrates. The rectification characteristics were observed in the CCTO capacitance structure with Pt top electrodes at temperatures ranging from 150 K to 330 K, which are attributed to the formation of a Schottky junction between n-type semiconducting CCTO and Pt due to the difference of their work functions. At low forward-bias voltage, the current-voltage characteristics of the Schottky junction follow J=J_sD expqV/(k₀T). A strong decrease in ideality factor with the increasing temperature is obtained by linear fitting at the low bias voltage.