Transformation from AA to AB-Stacked Bilayer Graphene on α−SiO2 under an Electric Field
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Abstract
The energetic and electronic structure of bilayered graphene (BLG) with AA stacking arrangement on a SiO2 substrate is investigated in the presence of an electric field F of different intensities by ab initio density functional calculations. The AA−stacked bilayer graphene is stable on the SiO2 substrate in the absence of an electric field. However, as F increases, the AA-stacked bilayer graphenes are gradually shifted with each other and finally transfers into AB-stacked bilayer graphenes. The bandgap is accordingly changed.
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LIU Yan, AO Zhi-Min, WANG Tao, WANG Wen-Bo, SHENG Kuang, YU Bin. Transformation from AA to AB-Stacked Bilayer Graphene on α−SiO2 under an Electric Field[J]. Chin. Phys. Lett., 2011, 28(8): 087303. DOI: 10.1088/0256-307X/28/8/087303
LIU Yan, AO Zhi-Min, WANG Tao, WANG Wen-Bo, SHENG Kuang, YU Bin. Transformation from AA to AB-Stacked Bilayer Graphene on α−SiO2 under an Electric Field[J]. Chin. Phys. Lett., 2011, 28(8): 087303. DOI: 10.1088/0256-307X/28/8/087303
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LIU Yan, AO Zhi-Min, WANG Tao, WANG Wen-Bo, SHENG Kuang, YU Bin. Transformation from AA to AB-Stacked Bilayer Graphene on α−SiO2 under an Electric Field[J]. Chin. Phys. Lett., 2011, 28(8): 087303. DOI: 10.1088/0256-307X/28/8/087303
LIU Yan, AO Zhi-Min, WANG Tao, WANG Wen-Bo, SHENG Kuang, YU Bin. Transformation from AA to AB-Stacked Bilayer Graphene on α−SiO2 under an Electric Field[J]. Chin. Phys. Lett., 2011, 28(8): 087303. DOI: 10.1088/0256-307X/28/8/087303
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