Bias Effects on the Growth of Helium-Containing Titanium Films

¹ Department of Physics, Sichuan University, Chengdu 610064
² Key Laboratory of Radiation Physics and Technology of the Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064
³ Institue of Modern Physics, Fudan University, Shanghai 200433
⁴ Laboratory of Nuclear Analysis Technique, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049

Received Date: November 30, 2010

Published Date: June 30, 2011

Abstract

Helium-containing titanium films were prepared on Si substrates with various biases applied by magnetron sputtering under stable He/Ar ambiance. Rutherford backscattering and elastic recoil detection analyses are used to measure the thickness of the He-Ti films and the helium depth profile, respectively. Experiments of x-ray diffraction and variable energy positron annihilation spectroscopy are carried out to investigate the microstructures of titanium films and the corresponding helium-related defects developed. The behavior of the implanted He, the microstructure of the He-Ti film and the formation of He-related defects all are affected by the substrate biases applied.

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