CMOS Compatible Nonvolatile Memory Devices Based on SiO2/Cu/SiO2 Multilayer Films
-
Abstract
We systematically investigate the resistive switching characteristics of SiO2 films with a Cu/SiO2/Cu/SiO2/Pt multilayer structure. The device exhibits good resistive switching performances, including a high ON/OFF resistance ratio (>103), good retention characteristic (>104s), satisfactory switching endurance (>200 cycles), a fast programming speed (<100 ns) and a high device yield (∼100%). Considering these results, SiO2-based memories have highly promising applications for nonvolatile memory devices.
Article Text
-
-
-
About This Article
Cite this article:
WANG Yan, LIU Qi, LV Hang-Bing, LONG Shi-Bing, ZHANG Sen, LI Ying-Tao, LIAN Wen-Tai, YANG Jian-Hong, LIU Ming. CMOS Compatible Nonvolatile Memory Devices Based on SiO2/Cu/SiO2 Multilayer Films[J]. Chin. Phys. Lett., 2011, 28(7): 077201. DOI: 10.1088/0256-307X/28/7/077201
|
WANG Yan, LIU Qi, LV Hang-Bing, LONG Shi-Bing, ZHANG Sen, LI Ying-Tao, LIAN Wen-Tai, YANG Jian-Hong, LIU Ming. CMOS Compatible Nonvolatile Memory Devices Based on SiO2/Cu/SiO2 Multilayer Films[J]. Chin. Phys. Lett., 2011, 28(7): 077201. DOI: 10.1088/0256-307X/28/7/077201
|
WANG Yan, LIU Qi, LV Hang-Bing, LONG Shi-Bing, ZHANG Sen, LI Ying-Tao, LIAN Wen-Tai, YANG Jian-Hong, LIU Ming. CMOS Compatible Nonvolatile Memory Devices Based on SiO2/Cu/SiO2 Multilayer Films[J]. Chin. Phys. Lett., 2011, 28(7): 077201. DOI: 10.1088/0256-307X/28/7/077201
|
WANG Yan, LIU Qi, LV Hang-Bing, LONG Shi-Bing, ZHANG Sen, LI Ying-Tao, LIAN Wen-Tai, YANG Jian-Hong, LIU Ming. CMOS Compatible Nonvolatile Memory Devices Based on SiO2/Cu/SiO2 Multilayer Films[J]. Chin. Phys. Lett., 2011, 28(7): 077201. DOI: 10.1088/0256-307X/28/7/077201
|
DownLoad: