Influence of N₂ Flux on InN Film Deposition on Sapphire (0001) Substrates by ECR-PEMOCVD

Highly preferred InN films are deposited on sapphire (0001) substrates by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) without using a buffer layer. The structure, surface morphological and electrical characteristics of InN are investigated by in-situ reflection high energy electron diffraction, x-ray diffraction, x-ray photoelectron spectroscopy, atomic force microscopy and Hall effect measurement. The quality of the as-grown InN films is markedly improved at the optimized N₂ flux of 100 sccm. The results show that the properties of the films are strongly dependent on N₂ flux.