Design of a 1200-V Thin-Silicon-Layer p-Channel SOI LDMOS Device

A 1200-V thin-silicon-layer p-channel silicon-on-insulator (SOI) lateral double-diffused metal-oxide-semiconductor (LDMOS) transistor is designed. The device named INI SOI p-LDMOS is characterized by a series of equidistant high concentration n⁺ islands inserted at the interface of a top silicon layer and a buried oxide layer. Accumulation−mode holes, caused by the electric potential dispersion between the device surface and the substrate, are located in the spacing between two neighboring n⁺ islands, and greatly enhance the electric field of the buried oxide layer and therefore, effectively increase the device breakdown voltage. Based on a 2−µm −thick buried oxide layer and a 1.5-µm −thick top silicon layer, a breakdown voltage of 1224 V is obtained, resulting in the high electric field (608 V/µm ) of the buried oxide layer.