Temperature and Composition Dependence of GaN_xAs_1−x(0 < x ≤ 0.05) before and after Annealing

The parameters in the band-anticrossing model for GaN_xAs_1−x (0 < x ≤ 0.05) are obtained considering the effect of temperature and composition. It is found that the effect of composition on the N levels in the band-anticrossing model is weak. The temperature dependence of the N levels and the temperature dependence of the band gap energy of GaNAs are weaker than that of GaAs. In addition, the reason for a spectral blueshift and the effect of annealing on the parameters in the band-anticrossing model are also discussed.