Wafer-Scale Gigahertz Graphene Field Effect Transistors on SiC Substrates

Wafer-scale graphene field-effect transistors are fabricated using benzocyclobutene and atomic layer deposition Al₂O₃ as the top−gate dielectric. The epitaxial-graphene layer is formed by graphitization of a 2-inch-diameter Si-face semi-insulating 6H-SiC substrate. The graphene on the silicon carbide substrate is heavily n-doped and current saturation is not found. For the intrinsic characteristic of this particular channel material, the devices cannot be switched off. The cut-off frequencies of these graphene field-effect transistors, which have a gate length of 1 µm , are larger than 800 MHz. The largest one can reach 1.24 GHz. There are greater than 95% active devices that can be successfully applied. We thus succeed in fabricating wafer-scale gigahertz graphene field-effect transistors, which paves the way for high-performance graphene devices and circuits.