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Abstract
In order to clarify the origin of the efficiency droop effect in InGaN based blue multiple-quantum-well (MQW) light emitting diodes (LEDs), a reasonable model is set up, taking all the possible factor (carrier delocalization, carrier leakage and Auger recombination) into account. By fitting the external quantum efficiency-injection current (η–I) measurements of two LED samples, the validity of the model is demonstrated. The fit results show that the main origin of efficiency droop at a high injection current is carrier leakage. Furthermore it is also indicated that carrier delocalization plays an important role in the efficiency droop effect in those LEDs of large localization degree. -
References
[1] Kim A Y, Götz W, Seigerwald D A, Wierer J J, Gardner N F, Sun J, Stockman S A, Martin P S, Krames M R, Kern R S and Steranka F M 2001 Phys. Status Solidi A 15 188 [2] Kim M H, Schubert M F, Dai Q, Kim J K, Schubert E F, Piprek J and Park Y 2007 Appl. Phys. Lett. 91 183507 [3] Nakamura S, Senoh M, Iwasa N and Nagahama S 1995 Jpn. J. Appl. Phys. 34 L797 [4] Rozhansky I V and Zakheim D A 2006 Semiconductors 40 839 [5] Rozhansky I V and Zakheim D A 2007 Phys. Status Solidi A 204 227 [6] Shen Y C, Mueller G O, Watanahe S, Gardner N F, Munkholm A and Krames M R 2007 Appl. Phys. Lett. 91 141101 [7] Chichibu S F, Azuhata T, Sugiyama M, Kitamura T, Ishida Y, Okumura H, Nakanishi H, Sota T and Mukai T 2001 J. Vac. Sci. Technol. B 19 2177 [8] Tansu N and Mawst L J 2005 J. Appl. Phys. 97 054052 [9] Zhao H P, Liu G Y, Arif R A and Tansu N 2010 Solid-State Electron. 54 1119 [10] Vurgaftman I and Meyer J R 2009 Nitride Semiconductor Devices (New York: Wiley) p 13 [11] Vurgaftman I and Meyer J R 2003 J. Appl. Phys. 94 3675 [12] Lu Y C, Chen C Y, Wang H C, Yang C C and Cheng Y C 2007 J. Appl. Phys. 101 063511 [13] Wang J X, Wang L, Zhao W, Hao Z B and Luo Y 2010 Appl. Phys. Lett. 97 201112 [14] Wang J X, Wang L, Zhao W, Zou X and Luo Y 2010 Sci. Chin. Tech. Sci. 53 306
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